High-density InGaN nanodots grown on pretreated GaN surfaces

P Chen, SJ Chua, JN Tan - Applied physics letters, 2006 - pubs.aip.org
High-density InGaN nanodots are successfully grown on pretreated GaN surfaces. The GaN
surfaces were covered by Si O 2 layers firstly, and then the Si O 2 layers were removed …
被引用次数：9 相关文章

High-density InGaN nanodots grown on pretreated GaN surfaces

P Chen, SJ Chua, JN Tan - Applied Physics Letters, 2006 - pubs.aip.org
High-density InGaN nanodots are successfully grown on pretreated GaN surfaces. The GaN
surfaces were covered by SiO2 layers firstly, and then the SiO2 layers were removed before …

High-density InGaN nanodots grown on pretreated GaN surfaces

P Chen, SJ Chua, JN Tan - Applied Physics Letters, 2006 - ui.adsabs.harvard.edu
High-density InGaN nanodots are successfully grown on pretreated GaN surfaces. The GaN
surfaces were covered by SiO 2 layers firstly, and then the SiO 2 layers were removed …

[引用][C] High-density InGaN nanodots grown on pretreated GaN surfaces

P CHEN, SJ CHUA, JN TAN - Applied physics letters, 2006 - American Institute of Physics