By integrating a pin photodiode photodetector directly into a ballistic electron emission
luminescence (BEEL) heterostructure with GaAs quantum-well active region, we have …

We have integrated a photon detector directly into a ballistic electron emission
luminescence (BEEL) heterostructure, just below a luminescent quantum well. Results from …

We use room-temperature ultrahigh-vacuum metal-film wafer bonding to integrate a Si
photodetector with a AlGaAs/GaAs-based ballistic electron emission luminescence (BEEL) …

We introduce a solid-state version of ballistic electron emission microscopy/spectroscopy
(BEEM/BEES) on GaAs–AlGaAs heterostructures using a metal–insulator–metal (MIM) …

We describe the design, fabrication, and operation of a GaAs-based heterostructure device
which emits band gap luminescence from solid-state tunnel-junction ballistic injection of …

Using a method complementary to ballistic electron emission luminescence (BEEL), we
demonstrate tunnel-junction injection of sub-band-gap hot holes into the valence band of a …

Ballistic electron emission spectroscopy and ballistic electron emission microscopy offer the
unique possibility of probing subsurface quantum states. To improve the spectroscopic …

Local characterization of electroluminescence (EL) from working light-emitting devices is a
key to developing and improving their EL properties. The authors developed a scanning …

The development of monochromatic ultrafast electron sources with high brightness and high
coherence is increasingly important in both time-resolved and energy-resolved electron …

We present a luminescence spectroscopy for semiconductor heterostructures based on local
hot electron injection from a scanning tunneling microscope tip. In addition to a tip voltage …