Coherent coupling and formation of molecular orbitals in vertically coupled quantum-dot
molecules is studied for a seven-dot InAs/GaAs system. The electron states are computed …

Strain in self-assembled quantum dots is a long-range phenomenon, and its realistic
determination requires a large computational domain. To tackle this problem for an …

Atomistic computations of electronic properties for nanostructures with strain (such as self‐
assembled quantum dots) typically consist of two components–a calculation of the individual …

Self‐assembled quantum dots (DQ) can be grown as stacks where the QD distance can be
controlled with atomic layer control. This distance determines the interaction of the artificial …

Strain distributions around a Ge quantum dot (QD) buried in a Si spacer layer are
investigated theoretically by means of classical molecular dynamics simulations using the …

The minimum energy configurations of the atomic structure of a Ge island on a Si (001)
substrate are calculated by using the conjugate gradient minimization of the potential energy …

Self-assembled quantum dots are highly strained heterostructures, and a rigorous atomistic
strain model is needed to predict the behavior of these devices. An anharmonic strain model …

Self-assembled quantum dots (QDs) are highly strained heterostructures. The lattice strain
significantly modifies the electronic and optical properties of these devices. A universal …

An atomistic model of an InxGa1− xAs/GaAs quantum dot with nonuniform composition is
investigated. An empirical interatomic potential, the Tersoff potential, is used to obtain …

The empirical tight-binding approach is used to study atomic-scale effects on electronic
coupling in vertically stacked, self-assembled InAs/GaAs quantum dots. A model with …