Quantum dot (QD) solar cells have been actively investigated recently since they have been
theoretically shown to have the potential to realize high conversion efficiencies. However …

This paper reports on InAs/InGaAs quantum dot solar cells (QDSCs) deposited by molecular
beam epitaxy (MBE) on (001) n-type silicon (n-Si) substrates. In-situ RHEED measurements …

The effects of quantum dot (QD) size on the optical and electrical properties of InAs/GaAs
QD solar cells (QDSCs) were investigated. QDSCs with varying InAs QD size were …

The effect of dot-height truncation on the device performance of multilayer InAs/GaAs
quantum dot solar cells is investigated. The different structures were grown by chemical …

InGaAs-capped InAs quantum dots (QDs) and InAs QDs were adopted for the study of the
effects through growth temperature and the band structure of InAs QDs on the performance …

An InAs/GaAs quantum dot (QD) solar cell was compared to a similar bulk GaAs pin
structure. A 5% increase of the photocurrent was measured in the QD solar cell under Global …

This study demonstrates the feasibility of improving the performance of a quantum dot (QD)
intermediate band solar cell (SC) by capping an InGaAs layer on the InAs QDs and inserting …

We have reported InAs/GaAs and InGaAs/GaAs quantum dot solar cells (QDSCs) and the
effect of rapid thermal annealing (RTA) on their optical properties. A thermal stability was …

We fabricate a high-efficiency InAs/GaAs quantum dot (QD) solar cell. It contains five layers
of high-density self-assembled InAs QDs grown by metalorganic chemical vapor deposition …

We report InGaP-based multistacked InGaAs quantum dot (QD) solar cells with GaAs spacer
layers. We obtain a highly stacked and well-aligned InGaAs QD structure with GaAs spacer …