We report a photoluminescence study of excitons localized by interface fluctuations in a
narrow GaAs/AlGaAs quantum well. This type of structure provides a valuable system for the …

We discuss a number of experiments involving optical spectroscopy of excitons localized by
interface fluctuations in narrow GaAs quantum wells. Monolayer-high steps at the interface …

Summary form only given. With fine spatial and spectral resolution we measure the
homogeneous spectra of single naturally formed GaAs quantum dots. The origins of the …

We describe the results of a photoluminescence study of quantum dots which are formed by
interface fluctuations in narrow GaAs/AlAs single quantum wells. The photoluminescence …

We have measured the optical absorption due to an exciton confined to a single interface
fluctuation quantum dot by directly measuring the transmission through both a submicron …

We employ photoluminescence spectroscopy with micrometer spatial resolution to study
different types of single quantum dot structures. On dots formed by well width fluctuations in …

Fully confined excitons are observed in natural quantum dots, which are formed by well
width fluctuations in narrow GaAs quantum wells. Contributions from a single quantum dot …

We calculate the near-field optical spectra of excitons and biexcitons in semiconductor
quantum dots naturally occurring at interface fluctuations in GaAs-based quantum wells …

We report single-photon interferometry of emissions from single self-assembled GaAs/(Al,
Ga) As quantum dots. Homogeneous linewidth of excitons is determined as a function of …