Analytical model for RDF-induced threshold voltage fluctuations in double-gate MOSFET

SR Sriram, B Bindu - IEEE Transactions on Device and …, 2019 - ieeexplore.ieee.org
In this paper, a physics-based threshold voltage model of symmetrical double gate (DG)
MOSFET, including the random dopants in the channel is presented. The model is derived …
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