Isoelectronic bound excitons in In-and T1-doped Si: A novel semiconductor defect

Photoluminescence of transition metal complexes in silicon

H Conzelmann - Applied Physics A, 1987 - Springer
Results of luminescence studies on silicon doped with the 3d transition metals are reviewed.
Spectra are observed after V, Cr, Mn, Fe, and Cu diffusion. We discuss the problems of …
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