Comparative study on carbon incorporation in MOCVD AlGaAs layers between arsine and tertiarybutylarsine
M Mashita, H Ishikawa, T Izumiya - Journal of crystal growth, 1995 - Elsevier
We have studied the carbon incorporation properties in MOCVD Al0. 7Ga0. 3As epilayers on
differently oriented surfaces by using either arsine or tertiarybutylarsine (TBAs). The present …
differently oriented surfaces by using either arsine or tertiarybutylarsine (TBAs). The present …
OMVPE growth of InAsSb using novel precursors
KT Huang, Y Hsu, RM Cohen, GB Stringfellow - Journal of crystal growth, 1995 - Elsevier
InAs, InSb, InAsSb and the related bismuth containing alloys are useful materials for infrared
applications. A significant effort has been expended to develop new group III and group V …
applications. A significant effort has been expended to develop new group III and group V …
Metalorganic chemical vapor deposition of AlGaAs using tertiarybuthylarsine
H Ishikawa, T Izumiya… - Japanese journal of …, 1995 - iopscience.iop.org
The amounts of intrinsic carbon incorporation in AlGaAs epilayers grown by metalorganic
chemical vapor deposition (MOCVD) were compared between ones grown using AsH 3 and …
chemical vapor deposition (MOCVD) were compared between ones grown using AsH 3 and …
A study of dopant incorporation into gallium arsenide grown by metal-organic vapor phase epitaxy.
JM Redwing - 1995 - elibrary.ru
An experimental methodology was developed to study dopant incorporation from chemical
sources during the metal-organic vapor phase epitaxy (MOVPE) of GaAs. Gas phase …
sources during the metal-organic vapor phase epitaxy (MOVPE) of GaAs. Gas phase …