Electroluminescent solid state devices based on silicon nanowires, fabricated by using lithography and etching techniques
AG Nassiopoulos, S Grigoropoulos, D Papadimitriou - Thin Solid Films, 1997 - Elsevier
Silicon quantum wires in the form of silicon pillars on silicon were fabricated by using
lithography and etching techniques. They were then used to fabricate electroluminescent …
lithography and etching techniques. They were then used to fabricate electroluminescent …
Fabrication of silicon nanocrystallites by oxidation/annealing of polysilane films and their luminescence properties
S Miyazaki, A Mouraguchi, K Shiba - Thin Solid Films, 1997 - Elsevier
Hydrogenated polysilane films prepared from a SiH4 plasma were oxidized at room
temperature and subsequently annealed at temperatures ranging from 800 to 1000° C. It is …
temperature and subsequently annealed at temperatures ranging from 800 to 1000° C. It is …
Stratified suspension of highly ordered Si nanoparticles in SiO2 created by Si MBE with oxygen co-implantation
Y Ishikawa, N Shibata, S Fukatsu - Journal of crystal growth, 1997 - Elsevier
A new class of non-dispersive Si nanoparticle (SNP) system has been created on Si (1 0 0)
wafers by low-energy oxygen co-implantation during Si MBE. Ordered, highly oriented Si …
wafers by low-energy oxygen co-implantation during Si MBE. Ordered, highly oriented Si …