Assessment of compensation ratio in high-purity GaAs using photoluminescence
G Oelgart, S Grämlich, T Bergunde, E Richter… - Materials Science and …, 1997 - Elsevier
The compensation ratio in high-purity n-type GaAs layers grown by metal-organic vapour
phase epitaxy was determined from low-temperature photoluminescence measurements …
phase epitaxy was determined from low-temperature photoluminescence measurements …