The initial stages of GaAs overgrowth over self-assembled coherently strained InAs quantum
dots (QDs) are studied. For small GaAs coverages (below 5 nm), atomic force microscopy …

We report time-resolved photoluminescence measurements as a function of temperature for
InAs quantum dots grown by molecular-beam epitaxy on GaAs (100). As the temperature is …

The effect of phonon bottleneck on quantum-dot laser performance is examined by solving
the carrier-photon rate equations including the carrier relaxation process into the quantum …

We study the effect of free carriers on photoluminescence from modulation-doped self-
assembled quantum dots. Exact diagonalization studies of up to N= 8 electrons and a single …

Contactless electroreflectance, at both 300 and 20 K, has been used to investigate a
vertically coupled quantum dot QD-based InAs/GaAs laser structure. Signals have been …

The emission spectrum of self-assembled InGaAs/GaAs quantum dots filled with up to 10
excitions is measured in magnetic fields up to 13 Tesla. The spectrum shows a number of …

The electronic states of a parabolic quantum dot in a magnetic field are studied with the
inclusion of the spin-orbit interaction. The analytical formulae for the ground state energy of …

We perform time‐resolved photoluminescence experiments to study carrier relaxation in
strain‐induced (GaIn) As quantum dots. A sub‐picosecond onset of the photoluminescence …

Time‐resolved photoluminescence experiments are performed to study carrier relaxation in
strain‐induced (GaIn) As quantum dot structures. We observe a sub‐picosecond onset of the …

We study the relaxation dynamics of electron-hole pairs in semiconductor quantum wells
and quantum dots. Temporally and spatially resolved optical pump-and-probe experiments …