This book presents an overview of the current understanding of the physics of zero-
dimensional semiconductors. It concentrates mainly on quantum dots of wide-gap …

Strained epitaxy has been shown to produce pyramidal-shaped quantum dot structures by
single-step epitaxy. In this paper we examine the strain tensor in these quantum dots using a …

Blueshifts in the photoluminescence emission energies from an ensemble of self-assembled
InAs quantum dots are observed as a result of postgrowth thermal annealing. Enhancement …

We investigate island formation during heteroepitaxial growth using an atomistic model that
incorporates deposition, activated diffusion, and stress relaxation. For high misfit the system …

The resonant tunneling of electrons through a 20 nm scale InAs quantum dot bound by a
pair of very thin AlAs barriers is studied. A well-resolved composite peak resulting from the …

Stacked layers of self-assembled InP quantum dots embedded in Ga 0.52 In 0.48 P have
been prepared by solid source molecular beam epitaxy. Thereby the distance between the …

Differences in InGaAs island nucleation on vicinal (100) GaAs surfaces as a function of
miscut angle are presented. Arrhenius plots of saturation island densities show changes in …

The growth of very uniform Ge dots on Si (100) is achieved by using molecular beam
epitaxy. The atomic force microscopy and the transmission electron microscopic …

We propose a novel photodetector capable of multi-spectral channel operation. The device
makes use of the ability of a quantum dot plane to capture an optical spectrum, and of a …

Data are presented on the dependence of Al content on the formation of InAlGaAs quantum
dots grown by strained-layer molecular beam epitaxy. Atomic force microscopy and …