Thermal generation rate in quantum dots (QD) can be significantly smaller than in quantum
wells, rendering a much improved signal to noise ratio. QDs infrared photodetectors were …

Carrier relaxation in self-organized In 0.4 Ga 0.6 A s/G a A s quantum dots is investigated by
time-resolved differential transmission measurements. The dots have a base dimension of …

We apply low temperature confocal optical microscopy to spatially resolve, and
spectroscopically study, a single self-assembled quantum dot. By comparing the emission …

Postgrowth rapid thermal annealing was used to modify the structural and optical properties
of the self-assembled InAs quantum dots grown on GaAs substrates by molecular beam …

We demonstrate the dimensional tuning of InAs self-assembled quantum dots (QDs) by
changing the growth kinetics during the capping of InAs islands with GaAs. Modifying the …

We establish rate equations to describe Auger carrier capture kinetics in quantum dot
structures, calculate Auger capture coefficients for self-assembled quantum dots, and …

Interfacial compositional disordering in In 0.6 Ga 0.4 A s/G a A s quantum dots has been
used to tune their intersublevel energy spacings (Δ E [(i+ 1)− i]). Interdiffusion blueshifted all …

Multiexciton complexes in In x Ga 1− x A s/G a A s quantum dots in the weak-confinement
regime have been investigated by photoluminescence spectroscopy at T= 2 K. The lateral …

We present a detailed study of the interband excitonic transitions of InAs/GaAs self-
organized quantum dots (QDs) based on photovoltage (PV), photoreflectance (PR) and …

We have studied the optical properties of (InGa) As self-assembled quantum dots grown on
(311) B-oriented GaAs substrates. The luminescence linewidth is considerably narrower …