We report significant differences in the temperature-dependent and time-resolved
photoluminescence (PL) from low and high surface density In x Ga 1− x As/GaAs quantum …

Studying a uniformly excited ensemble of InAs islands, the emission intensities of the
allowed radiative transitions are modeled in the state-filling limit for pulsed and steady-state …

We report a bistability in the resistance of a GaAs/AlGaAs modulation doped field effect
transistor in which a layer of InAs self-organized quantum dots has been grown near the …

We calculate the variation of the potential and confinement energy due to inter-diffusion of a
spherical InxGa1− xAs quantum dot embedded in GaAs. The potential drops off more quickly …

We have investigated photoexcited carrier dynamics in as-grown and intermixed In x Ga 1−
x A s/G a A s quantum dots and quantum wells by time-resolved photoluminescence with …

Capacitance-and conductance-voltage studies have been carried out on Schottky barrier
structures containing a sheet of self-organized InAs quantum dots. The dots are formed in …

Large variations in In x Ga 1− x As quantum dot concentrations were obtained with
simultaneous growths on vicinal GaAs [001] substrates with different surface step densities …

We report about spatially resolved experiments on self-assembled InGaAs quantum dots.
Single quantum dots can be investigated by using STM-induced luminescence …

The relaxation mechanisms of an array of 10 vertically coupled layers of InGaAs/AlGaAs
quantum dots were studied by time-resolved photoluminescence. Both resonant and non …

We study time-resolved emission from self-assembled single InGaAs/GaAs quantum dots by
the time-correlated single photon counting method using near-field optical microscopy. The …