Comparison of Raman-scattering and Shubnikov–de Haas measurements to determine charge density in doped semiconductors
We have verified the accuracy of free-charge determinations from Raman scattering in
doped semiconductors by comparing the results obtained from phonon–plasmon coupled …
doped semiconductors by comparing the results obtained from phonon–plasmon coupled …
Generalization of the hydrodynamical model to analyze Raman scattering by free carriers: application to n-InP
J Ibáñez, R Cuscó, N Blanco, G González-Dı́az… - Journal of …, 2000 - Elsevier
The results of free-carrier density evaluation by means of Raman scattering in doped
semiconductors strongly depend on the electric susceptibility model used to calculate …
semiconductors strongly depend on the electric susceptibility model used to calculate …
Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
Raman scattering by LO phonon–plasmon coupled modes LOPCMs has been extensively
used to study free carriers in semiconductors. 1 While LOPCM Raman lineshape …
used to study free carriers in semiconductors. 1 While LOPCM Raman lineshape …