[图书][B] Physics of quantum well devices
BR Nag - 2001 - books.google.com
Quantum well devices have been the objects of intensive research during the last two
decades. Some of the devices have matured into commercially useful products and form part …
decades. Some of the devices have matured into commercially useful products and form part …
2‐D analytical model for current–voltage characteristics and output conductance of AlGaN/GaN MODFET
Rashmi, S Haldar, RS Gupta - Microwave and Optical …, 2001 - Wiley Online Library
A two‐dimensional analytical model for an AlGaN/GaN MODFET is presented. The model
assumes the velocity saturation of electrons in 2‐DEG, which causes current saturation and …
assumes the velocity saturation of electrons in 2‐DEG, which causes current saturation and …
Carrier‐concentration‐dependent low‐field‐mobility model for InAlAs/InGaAs/InP lattice‐matched HEMT for microwave application
A carrier‐concentration‐dependent low‐field‐mobility model for a lattice‐matched
InAlAs/InGaAs/InP HEMT for microwave frequency applications is developed. The …
InAlAs/InGaAs/InP HEMT for microwave frequency applications is developed. The …
A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135 GHz cut-off frequency
Extrinsic lattice matched InAlAs/InGaAs/InP HEMT model, incorporating the parasitic source
and drain resistance, for very high frequency application is developed. The current voltage …
and drain resistance, for very high frequency application is developed. The current voltage …