Raman scattering by LO phonon-plasmon coupled modes in n-type
We have studied by means of Raman scattering the LO phonon-plasmon coupled modes in
n− In 0.53 Ga 0.47 As, for carrier densities between 5× 10 16 and 5× 10 19 cm− 3. In …
n− In 0.53 Ga 0.47 As, for carrier densities between 5× 10 16 and 5× 10 19 cm− 3. In …
Raman scattering determination of free charge density using a modified hydrodynamical model
We have carried out a systematic evaluation of the accuracy of the charge density values
obtained by fitting a modified hydrodynamical model to Raman spectra. The hydrodynamical …
obtained by fitting a modified hydrodynamical model to Raman spectra. The hydrodynamical …
Evaluation of free-carrier concentration in Si+-implanted InP by means of photoluminescence
Optical techniques can provide nondestructive, contactless determinations of free-charge
density in doped semiconductors. We discuss the use of photoluminescence spectra to …
density in doped semiconductors. We discuss the use of photoluminescence spectra to …
Indium phosphide (InP) phonon dispersion and density of states, phonon-plasmon modes
Collaboration: Authors and editors of the … - … IV Elements, IV-IV and III …, 2001 - Springer
This document is part of Subvolume A1a 'Group IV Elements, IV-IV and III-V Compounds.
Part a-Lattice Properties' of Volume 41 'Semiconductors' of Landolt-Börnstein-Group III …
Part a-Lattice Properties' of Volume 41 'Semiconductors' of Landolt-Börnstein-Group III …