Semiconductor quantum dots and related systems: electronic, optical, luminescence and related properties of low dimensional systems
AD Yoffe - Advances in physics, 2001 - Taylor & Francis
This review seeks to extend the scope of both the experimental and theoreticalwork carried
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …
Effects of Be on the II–VI/GaAs interface and on CdSe quantum dot formation
The effects of Be on the II–VI/GaAs interface and on CdSe quantum dot (QD) formation were
investigated. A (1× 2) surface reconstruction was observed after a Be–Zn coirradiation of the …
investigated. A (1× 2) surface reconstruction was observed after a Be–Zn coirradiation of the …
The formation mechanism of self-assembled CdSe quantum dots
Y Yang, DZ Shen, JY Zhang, XW Fan, BS Li… - Journal of crystal …, 2001 - Elsevier
The formation process of CdSe self-assembled quantum dots (SAQDs) was investigated
systematically by atomic force microscopy (AFM). Several monolayers (MLs) of CdSe …
systematically by atomic force microscopy (AFM). Several monolayers (MLs) of CdSe …
High electric field transport in modulation-doped InAs self-assembled quantum dots for high-frequency applications
HS Park, VG Mokerov - Applied Physics Letters, 2001 - pubs.aip.org
Modulation-doped N–AlGaAs (GaAs/InAs/GaAs/InAs)/GaAs-heterostructures with InAs-
quantum dots (QDs) have been grown and investigated. Using these structures, modulation …
quantum dots (QDs) have been grown and investigated. Using these structures, modulation …
[图书][B] Propriétés optiques et mécanismes de relaxation de l'énergie des porteurs dans des boîtes quantiques
NE Perret - 2001 - ui.adsabs.harvard.edu
L'objet de ce doctorat est l'etude des proprietes optiques, et en particulier de la relaxation de
l'energie des porteurs dans des structures a boites quantiques d'InAs/GaAs. Le travail …
l'energie des porteurs dans des structures a boites quantiques d'InAs/GaAs. Le travail …
Measurement of Optical Absorption in InAs/InAlAs Quantum Dots using a Photoluminescence Technique
LV Dao, M Gal, BH Koo, H Makino… - Japanese Journal of …, 2001 - iopscience.iop.org
We describe a simple method based on photoluminescence which allowed us to determine
theabsorption spectra of InAs/InAlAs quantum dots at low temperatures. The method is …
theabsorption spectra of InAs/InAlAs quantum dots at low temperatures. The method is …
[PDF][PDF] Tuning InAs/GaAs Self-Assembled Quantum Dots to investigate relaxation processes
Using a combination of resonant and non-resonant photoluminescence and
photoluminescence excitation spectroscopy we have investigated the carrier relaxation …
photoluminescence excitation spectroscopy we have investigated the carrier relaxation …
[PDF][PDF] Carrier Emission and Electronic Properties of Self-Organized Semiconductor Quantum Dots
MB Vensch - webdoc.sub.gwdg.de
In this work, the carrier dynamics and electronic properties of self-organized semiconductor
quantum dots are studied by depletion-layer capacitance transient spectroscopy (or deep …
quantum dots are studied by depletion-layer capacitance transient spectroscopy (or deep …
4.5. 5 References for 4.5: 4.5 Quantum-dot structures
C Klingshirn - Optical Properties. Part 1, 2001 - Springer
4.5.5 References for 4.5; 4.5 Quantum-dot structures, pp. 301-313 Page 1 4.5.5 References for
4.5 301 Landolt-Börnstein New Series III/34C1 3.0 2.5 2.0 1.5 1.0 0.5 0 0.2 0.4 0.6 0.8 1.0 …
4.5 301 Landolt-Börnstein New Series III/34C1 3.0 2.5 2.0 1.5 1.0 0.5 0 0.2 0.4 0.6 0.8 1.0 …
4.5 Quantum-dot structures: 4 III-V Semiconductors
C Klingshirn - Optical Properties. Part 1, 2001 - Springer
4.5 Quantum-dot structures; 4 III-V Semiconductors (C. Klingshirn), pp. 286-301 Page 1 286 4.5
Quantum-dot structures [Ref. p. 301 Landolt-Börnstein New Series III/34C1 4.5 Quantum-dot …
Quantum-dot structures [Ref. p. 301 Landolt-Börnstein New Series III/34C1 4.5 Quantum-dot …