Scanning spreading resistance microscopy current transport studies on doped semiconductors
RP Lu, KL Kavanagh, SJ Dixon-Warren… - Journal of Vacuum …, 2002 - pubs.aip.org
Two-dimensional (2D) carrier concentration profiling using scanning spreading resistance
microscopy (SSRM) has been carried out on molecular beam epitaxy-grown GaAs and InP …
microscopy (SSRM) has been carried out on molecular beam epitaxy-grown GaAs and InP …
Direct imaging of the depletion region of an InP junction under bias using scanning voltage microscopy
D Ban, EH Sargent, SJ Dixon-Warren, I Calder… - Applied physics …, 2002 - pubs.aip.org
We directly image an InP p–n junction depletion region under both forward and reverse bias
using scanning voltage microscopy (SVM), a scanning probe microscopy (SPM) technique …
using scanning voltage microscopy (SVM), a scanning probe microscopy (SPM) technique …
Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning …
D Ban, EH Sargent, SJ Dixon-Warren… - Journal of Vacuum …, 2002 - pubs.aip.org
We report results of a scanning spreading resistance microscopy (SSRM) and scanning
capacitance microscopy (SCM) study of the distribution of charge carriers inside multi …
capacitance microscopy (SCM) study of the distribution of charge carriers inside multi …
Two-dimensional transverse cross-section nanopotentiometry of actively driven buried-heterostructure multiple-quantum-well lasers
D Ban, EH Sargent, SJ Dixon-Warren… - Journal of Vacuum …, 2002 - pubs.aip.org
We report results of two-dimensional local potential measurement of the transverse cross-
section of operating buried-heterostructure (BH) multiple-quantum-well lasers. The …
section of operating buried-heterostructure (BH) multiple-quantum-well lasers. The …