Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high …
SK Lee, CM Zetterling, M Östling - Journal of applied physics, 2002 - pubs.aip.org
We report on the microscopic mapping of specific contact resistances (ρ c) and long-term
reliability tests using sputtered titanium tungsten (TiW) ohmic contacts to highly doped n-type …
reliability tests using sputtered titanium tungsten (TiW) ohmic contacts to highly doped n-type …
Influence of rapid thermal annealing modes on the parameters of Ni/21R-SiC contacts
VL Litvinov, KD Demakov, OA Agueev… - … (Cat. No. 02TH8595 …, 2002 - ieeexplore.ieee.org
Studied the effect of rapid thermal annealing (RTA) on the parameters of diode structures
with Ni-n-SiC-21R (0001) and Ni-n-SiC-21R (0001~) Schottky barriers. Ohmic contacts to …
with Ni-n-SiC-21R (0001) and Ni-n-SiC-21R (0001~) Schottky barriers. Ohmic contacts to …
[图书][B] Electron stimulated oxidation and rhenium electrical contacts on alpha-silicon carbide
GY McDaniel - 2002 - search.proquest.com
Electron stimulated oxidation (ESO) and rhenium (Re) metallizations on α-silicon carbide
(6H-SiC) were studied. ESO was quantified versus electron beam exposure, total vacuum …
(6H-SiC) were studied. ESO was quantified versus electron beam exposure, total vacuum …
[PDF][PDF] Direct Deposition of Low Resistance Thermally Stable Ohmic Contacts to n-SiC
MW Cole, PC Joshi, MH Ervin, JD Demaree, MC Wood… - academia.edu
Abstract Ni2Si Ohmic contacts were fabricated via pulsed laser deposition on n-SiC. The
contacts' electrical, structural, compositional, and surface morphological properties were …
contacts' electrical, structural, compositional, and surface morphological properties were …
[引用][C] Контакты Ni-nSiC 21R: электрические и структурные свойства
ВЛ Литвинов, КД Демаков, ОА Агеев… - АКТУАЛЬНЫЕ …, 2002 - elibrary.ru