An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched …
A Kranti, S Haldar, RS Gupta - Solid-State Electronics, 2002 - Elsevier
The present paper proposes an improved charge control model of lattice-mismatched
AlGaN/GaN HEMTs, valid over the entire operating region. The model for estimation of two …
AlGaN/GaN HEMTs, valid over the entire operating region. The model for estimation of two …
An analytical parasitic resistance dependent Id–Vd model for planar doped InAlAs/InGaAs/InP HEMT using non-linear charge control analysis
R Gupta, A Kranti, S Haldar, M Gupta… - Microelectronic …, 2002 - Elsevier
An analytical parasitic resistance dependent model for the current voltage characteristics for
InAlAs/InGaAs/InP HEMT is proposed. The model uses a new polynomial dependence of …
InAlAs/InGaAs/InP HEMT is proposed. The model uses a new polynomial dependence of …
An analytical 2D model for drain-induced barrier lowering in subquarter micrometer gate length InAlAs/InGaAs/InAlAs/InP LMHEMT
This paper presents an analytical 2D model for InAlAs/InGaAs/InAlAs/InP LMHEMT that
explains the drain induced barrier lowering (DIBL) and its effect on the device performance …
explains the drain induced barrier lowering (DIBL) and its effect on the device performance …