Electronic excitations in a nonparabolic conduction band of an n-type narrow-gap semiconductor
M Yamaguchi, T Inaoka, M Hasegawa - Physical Review B, 2002 - APS
Taking full account of nonparabolicity of a conduction-band dispersion, we investigate those
electronic excitations in the conduction band of an n-type narrow-gap semiconductor which …
electronic excitations in the conduction band of an n-type narrow-gap semiconductor which …
Raman scattering by an inhomogeneous plasma in implanted semiconductors
We compare the LO-phonon–plasmon coupled mode spectra of homogenously doped and
Si+-implanted InP samples. Whereas a narrow L− peak similar to that of the uniformly doped …
Si+-implanted InP samples. Whereas a narrow L− peak similar to that of the uniformly doped …
Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments
S Hernandez, R Cusco, L Artus, N Blanco… - … Journal of Modern …, 2002 - World Scientific
We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal
annealing. Defects consisting of protruding material with typical dimensions of a few microns …
annealing. Defects consisting of protruding material with typical dimensions of a few microns …