The fine structure of excitons is studied by magnetophotoluminescence spectroscopy of
single self-assembled In (Ga) As/(Al) GaAs quantum dots. Both strength and orientation of …

We have fabricated stacked InAs quantum dots (QDs) on InP (311) B substrates. An ultra-
high density of QDs was obtained by a method of compensation of strain by controlling the …

A detailed analysis of the electro-optical response of single as well as coupled
semiconductor quantum dots is presented. This is based on a realistic—ie, fully …

We explore growth effects leading to size and compositional limitations in the production of
self-assembled quantum dots (QD) emitting at long wavelengths. Molecular beam epitaxy …

We have investigated the emission properties of low-growth-rate InAs/GaAs self-assembled
quantum-dot multilayer samples with spacer layers of different thicknesses. For two layers …

We summarize here results of calculations and experiments on electron and valence hole
states in a single pair of vertically stacked and electronically coupled InAs self-assembled …

Post-growth rapid thermal annealing has been performed with In (Ga) As quantum dots
(QDs) at different strain statuses. It is confirmed that the strain-enhanced interdiffusion …

We have investigated the nucleation and ripening of pairs of InAs/GaAs quantum dot layers
separated by thin (2–20nm) GaAs spacer layers. Reflection high energy electron diffraction …

We present a theoretical study of the electron energy states in three-dimensional narrow gap
semiconductor quantum dots with different shapes under an external magnetic field. The …

We investigated, by photoluminescence excitation (PLE) measurements, the modification of
density of states and exciton dynamics in a high-density ordered In 0.4 Ga 0.6 As/GaAs …