Self-assembled InAs quantum dots (QDs) embedded in GaN 0.007 As 0.993 strain
compensating layers have been grown by metalorganic-molecular-beam epitaxy on a GaAs …

We report photon correlation measurements that reveal unique signatures of biexciton and
charged exciton emissions in a single self-assembled InAs quantum dot. Biexciton emission …

Quantum dots are nanometre-sized clusters of semiconductor material which confine
electrons in all three directions. The physics of quantum dots are dominated by quantization …

We report the experimental observation of photon antibunching in the photoluminescence of
a chemically synthesized CdSe/ZnS quantum dot (QD) at room temperature and from a …

We demonstrate a deterministic source for single-photon pulses with nearly 100% efficiency
based on pulsed laser excitation of a single-self assembled InAs quantum dot (QD). The …

An investigation of the transmission spectra as a function of electric field and light
polarization in self-assembled InAs quantum dots has been performed. To have access to …

We have performed experimental and theoretical studies of the effects of inhomogeneous
broadening on the luminescence properties of a self-assembled InAs quantum dot QD …

Many-body effects in strongly photoexcited single CdS nanocrystals embedded in Al 2 O 3
matrices have been studied by a scanning near-field optical microscope at low …

We present an overview of the experimental results in the field of quantum dot infrared
photodetectors (QDIPs) implemented on Ge self-assembled quantum dots (QDs) in Si. QDs …

The influence of a magnetic field on the hole energy spectra of uniform and multilayer
semiconductor nanocrystals is studied. The calculations are performed within the k· p …