Integration of SiCN as a low/spl kappa/etch stop and Cu passivation in a high performance...

Cost-effective" BARC/resist-via-fill free" integration technology for 0.13/spl mu/m Cu/low-k

SG Lee, KW Lee, IG Kim, WJ Park… - Digest. International …, 2002 - ieeexplore.ieee.org
Demonstrates the first successful integration scheme free of BARC/resist via-fill that not only
significantly simplifies the overall process complexity, but also reduces cost and process …
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Integrating PECVD low-k dielectric layers.(Deposition)

J Sabharwal, P Lee, D Sugiarto, T Sato, N Oka… - Solid State …, 2002 - go.gale.com
PECVD-deposited SiOC films are leading candidates to replace CVD [SiO. sub. 2] and
fluorinated [SiO. sub. 2] as lower-k interlayer dielectrics in multilevel interconnects [1, 2] …
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[引用][C] Post CMP passivation of copper interconnects

J Flake, J Groschopf, K Cooper, S Usmani, O Anilturk… - … Society Meeting Abstract, 2002
被引用次数：1 相关文章