The physical properties of detectors based on intraband optical absorption in quantum dots
is described and examined in the interest of providing a competitive alternative infrared (IR) …

Self-assembled InAs quantum dots (QDs) embedded in GaN 0.007 As 0.993 strain
compensating layers have been grown by metalorganic-molecular-beam epitaxy on a GaAs …

A review is given on the dynamic ploughing technique and its application on the fabrication
of nanoscale semiconductor structures. The vibrating tip of an atomic force microscope is …

Normal incidence InAs/In 0.15 Ga 0.85 As dots-in-a-well detectors operating at T= 78 K with
λ p∼ 7.2 μ m and a spectral width (Δλ/λ) of 35% are reported. The peak at 7.2 μm is …

A comparative study is made of the strain distribution in cylindrical InAs/GaAs and InP/InGaP
self-assembled quantum dots as obtained from isotropic elasticity theory, the anisotropic …

We present an advanced method to tailor the optical and electrical properties of
semiconductor quantum dot structures. By embedding vertically stacked quantum dots in a …

The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier
dynamics were compared between III-V quantum dots and similar quantum well structures. A …

The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier
dynamics were compared between InGaAs/GaAs quantum dots and similar quantum well …

InAs/GaAs quantum dot devices have the potential to be the leading technology for infrared
detection and emission, which are necessary for many military and domestic applications …

We have designed and fabricated quantum dot (QD) infrared photodetectors which utilize
photoionization of self-assembled InAs QDs and lateral transport of photoexcited carriers in …