Boron doping of diamond films from the gas phase
A Deneuville - Semiconductors and semimetals, 2003 - Elsevier
Publisher Summary This chapter discusses the boron doping of diamond films from the gas
phase. The goal of boron incorporation is p-type doping of the diamond films. However, it …
phase. The goal of boron incorporation is p-type doping of the diamond films. However, it …
Piezoresistivity in silicon carbide fibers
S Wang, DDL Chung - Journal of Electroceramics, 2003 - Springer
The polycrystalline β-SiC fiber of diameter 14 μm (without a carbon core) is piezoresistive
under tension, with gage factor 5. The resistivity increases linearly and reversibly with strain …
under tension, with gage factor 5. The resistivity increases linearly and reversibly with strain …
Giant magnetoimpedance and stress-impedance effects in multilayered FeSiB/Cu/FeSiB films with a meander structure
XH Mao, Y Zhou, JA Chen, JQ Yu, BC Cai - Journal of materials research, 2003 - Springer
Giant magnetoimpedance (GMI) and giant stress-impedence (GSI) effects were realized in
multilayered FeSiB/Cu/FeSiB films with a meander structure by magnetron sputtering on thin …
multilayered FeSiB/Cu/FeSiB films with a meander structure by magnetron sputtering on thin …
Design and development of a piezoresistive pressure sensor on micromachined silicon for high-temperature applications and of a signal-conditioning electronic circuit
The deposition of diamond films on silicon substrate by MWPECVD is described and
microstructural characteristics of the obtained films are reported. The resistive and …
microstructural characteristics of the obtained films are reported. The resistive and …
바이어스응력에의한고자왜아몰퍼스박막의자기이방성제어
신광호， 김영학， 박경일， 사공건 - 한국자기학회지, 2003 - dbpia.co.kr
우수한 연자성 특성과 자왜 특성을 동시에 나타내는 철계 아몰퍼스 박막을 이용한 고기능성
센서나 신호처리소자와 같은 자기탄성 디바이스를 구현하기 위해서는 자기이방성의 제어가 …
센서나 신호처리소자와 같은 자기탄성 디바이스를 구현하기 위해서는 자기이방성의 제어가 …