The structural and optical properties of GaAs-based 1.3 μm InAs/InGaAs dots-in-a-well
(DWELL) structures have been optimized in terms of different InGaAs and GaAs growth …

We study theoretically the properties of a polaron formed in a shallow, weakly elliptical, disk-
shaped InAs/GaAs quantum dot in the presence of a magnetic field by using the Davydov's …

We develop a theory of excitonic artificial atoms in strong magnetic fields. The excitonic
atoms are formed by N electrons and holes confined in a quantum dot. The single-particle …

We report on the growth and characterization of CdTe quantum dots on Si (111) by direct
island nucleation. The samples were grown by hot wall epitaxy on Si (111) substrates …

We report the results of time-integrated and time-resolved photoluminescence (PL)
spectroscopy on red-emitting self-organized InAs/Al 0.6 Ga 0.4 As quantum dots with indirect …

Self-assembled InP quantum dots, embedded in Ga 0.52 In 0.48 P and grown by solid
source molecular-beam epitaxy, exhibit strong structural and optical anisotropy …

InAs QDs on strained {GaAs/InAs} quasi-monolayer (QML) with an alternative growth
mechanism were grown by molecular beam epitaxy (MBE). The properties of quantum dots …

One-dimensional ZnO nanodot arrays have been realized by metalorganic chemical vapor
deposition on SiO 2 substrates patterned by focused ion beam (FIB). Especially for the lines …

Nanoparticles are considered as potential building blocks to fabricate future devices. This
article reports on a new method to direct the assembly of nanoparticles onto surfaces. This …

The subject of this thesis are collective effects of two-state systems which are solely caused
by the coupling of all systems to the same dissipative environment. First, we investigate the …