In order to fulfil the requirements of the information society there is a growing demand for
nanoelectronic devices with new or largely improved performances; these devices are …

Using reflection high-energy electron diffraction, photoluminescence and atomic force
microscopy, we have compared the growth of self-assembled InAs quantum dots (QDs) on …

The optical emission spectrum of a quantum dot array is computed for a series of cases in
which a nanometer scale microscope tip indenter is used to impose increasing elastic strain …

The influence of a thin AlAs layer (1 nm) located at different positions inside a GaAs matrix
on the electronic states of nearby deposited InAs quantum dots is theoretically investigated …

Light intensity images of self-assembled p-type InAs quantum dots (QDs) embedded in Al
0.6 Ga 0.4 As were measured by injecting electrons from the tip of a scanning tunneling …

Simulations of InAlAs/AlGaAs self-assembled quantum-dot arrays containing as many as 30
individual dots are used to identify a mechanism for lateral excitation transfer through …

We found that the AlInAs/AlGaAs self-assembled quantum dots (QDs) systematically
changed from type-I to type-II band alignment in real and momentum space with increasing …

An array of semiconductor quantum dots is studied computationally using an approach that
couples linear elasticity to electronic and optical properties. The effect of strain on the …

Spectrally resolved light intensity images of self‐assembled InAs/Al0. 6Ga0. 4As quantum
dots (QDs) were measured by injecting electrons from the tip of a scanning tunneling …