Investigation of semiconductors with defects using Raman scattering
LA Falkovsky - Physics-Uspekhi, 2004 - iopscience.iop.org
The influence of defects and carriers on lattice dynamics, especially on Raman scattering
from semiconductors and metals, is considered; a comparison of the theory with …
from semiconductors and metals, is considered; a comparison of the theory with …
Spectroscopic analysis of electrical properties in polar semiconductors with over-damped plasmons
S Nakashima, H Harima - Journal of applied physics, 2004 - pubs.aip.org
Raman and infrared reflection spectroscopies provide us information on electronic
properties in polar semiconductors. In the present work, we have employed a dielectric …
properties in polar semiconductors. In the present work, we have employed a dielectric …
Исследования полупроводников с дефектами методом комбинационного (рамановского) рассеяния света
ЛА Фальковский - Успехи физических наук, 2004 - ufn.ru
Как известно, основные успехи в экспериментальном изучении фононных спектров
достигнуты много лет назад с помощью тепловых нейтронов. Однако в последнее …
достигнуты много лет назад с помощью тепловых нейтронов. Однако в последнее …
Raman scattering by coupled phonon-plasmon modes
LA Falkovsky - Materials Science Forum, 2004 - Trans Tech Publ
The theory of Raman scattering by the electron− phonon coupled system in metals and
heavily doped semiconductors is developed taking into account the Coulomb screening and …
heavily doped semiconductors is developed taking into account the Coulomb screening and …