▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …

▪ Abstract As a result of their fully quantized electronic states and high radiative efficiencies,
self-assembled quantum dots have enabled major advances in fundamental physics studies …

Nanoscale science and technology is a young and burgeoning field that encompasses
nearly every discipline of science and engineering. With rapid advances in areas such as …

Quantum-dot infrared photodetectors (QDIPs) exhibit a bias-dependent shift in their spectral
response. In this paper, a novel signal-processing technique is developed that exploits this …

Normal incidence InAs/In 0.15 Ga 0.85 As dots-in-a-well (DWELL) detectors are reported in
which the peak operating wavelength was tailored from 7.2 to 11 μm using heterostructure …

We report results of time-resolved terahertz (THz) pulse spectroscopy experiments on
laterally ordered chains of self-assembled InGaAs quantum dots photoexcited with 400 …

Using the envelope function theory, intraband absorption is calculated for InAs/GaAs
pyramidal quantum dots. The effects of the quantum dot geometry, such as the dot shape …

Due to their fully quantised electronic states and high radiative efficiencies, self-assembled
quantum dots have enabled major new advances in both fundamental physics and in a …

We report two-color InGaAs quantum-dot infrared photodetectors. The InGaAs self-
assembled quantum dots were grown on InGaP matrix via metal-organic chemical vapor …

Midinfrared photodetectors in the 3–5 μm region were demonstrated by using molecular
beam epitaxy grown self-assembled Ge quantum dots at normal incidence. The structure …