Evaluation of scattering parameters, gain, and feedback‐capacitance‐dependent noise performance of a pseudomorphic high‐electron‐mobility transistor
This paper evaluates microwave performance in terms of scattering parameters and gains
and presents the effect of gate‐to‐drain capacitance Cgd on the noise behavior of a …
and presents the effect of gate‐to‐drain capacitance Cgd on the noise behavior of a …