Raman-scattering study of the InGaN alloy over the whole composition range
We present Raman-scattering measurements on In x Ga 1− x N over the entire composition
range of the alloy. The frequencies of the A 1 (LO) and E 2 modes are reported and show a …
range of the alloy. The frequencies of the A 1 (LO) and E 2 modes are reported and show a …
Group-V intermixing in InAs∕ InP quantum dots
CK Chia, SJ Chua, S Tripathy, JR Dong - Applied Physics Letters, 2005 - pubs.aip.org
Postgrowth intermixing in In As∕ In P quantum dot (QD) structures have been investigated
by rapid thermal annealing and laser irradiation techniques. In both cases, room …
by rapid thermal annealing and laser irradiation techniques. In both cases, room …
Dependence of electron density on Fermi energy in compensated n-type gallium antimonide
HS Bennett, H Hung, A Heckert - Journal of applied physics, 2005 - pubs.aip.org
The majority electron density as a function of the Fermi energy is calculated in zinc blende,
compensated n-type GaSb for donor densities between 10 16 and 10 19 cm− 3. The …
compensated n-type GaSb for donor densities between 10 16 and 10 19 cm− 3. The …
Annealing-Induced Group V Intermixing in InAs∕ InP Quantum Dots Probed by Micro-Raman Spectroscopy
S Tripathy, CK Chia, JR Dong… - Electrochemical and Solid …, 2005 - iopscience.iop.org
Post-growth intermixing by rapid thermal annealing in self-assembled quantum dot (QD)
structures with and without capping has been investigated. Room-temperature …
structures with and without capping has been investigated. Room-temperature …