Photoexcited carrier dynamics was studied in n and p modulation-doped self-assembled In
As∕ Ga As quantum dots by means of time-resolved photoluminescence with excitation and …

The electronic and optical properties of strained semiconductor quantum wires and dots are
investigated theoretically, taking into account their shapes and chemical compositions in a …

We have fabricated InGaN nanostructures on top of GaN hexagonal pyramids by selective
metalorganic vapor-phase epitaxy. With this approach, we are able to exactly control the …

In this paper we report studies of the optical properties of silicon quantum dot structures.
From time-resolved and time-integrated photoluminescence measurements we investigate …

While electronic and spectroscopic properties of self-assembled In 1− x Ga x As∕ Ga As
dots depend on their shape, height, and alloy compositions, these characteristics are often …

Temperature-dependent photoluminescence (PL) studies of an ensemble of self-assembled
(In, Ga) As quantum dots (QDs) on GaAs (100) provide insight into the nature of the …

We have examined state filling and thermal activation of carriers in buried InAs self-
assembled quantum dots (SAQDs) with excitation-dependent cathodoluminescence (CL) …

In this paper, we present an experimental study of the thermal emission and band-filling
effects on the rise time in high-quality InGaAs/InAs/GaAs quantum dots emitting at 1.2 μm at …

We have investigated the optical properties of InAs self-assembled quantum dots (SAQDs)
with the Si-doped GaAs barrier layer. Two types of samples are fabricated according to the …

Modulated electroreflectance spectroscopy Δ R∕ R of semiconductor self-assembled
quantum dots is investigated. The structure is modeled as dots with lens shape geometry …