This letter reports on a new gas-phase printing approach to deposit nanomaterials into addressable areas on a surface with 50 nm lateral accuracy. Localized fringing fields that …
Coherent coupling and formation of molecular orbitals in vertically coupled quantum-dot molecules is studied for a seven-dot InAs/GaAs system. The electron states are computed …
TY Lin, DY Lyu, J Chang, JL Shen, WC Chou - Applied physics letters, 2006 - pubs.aip.org
Temperature and time evolution of the photoluminescence (PL) intensity of bimodal ZnTe/ZnSe type-II quantum dots (QDs) were investigated. A particular temperature …
P Chen, SJ Chua, JN Tan - Applied physics letters, 2006 - pubs.aip.org
High-density InGaN nanodots are successfully grown on pretreated GaN surfaces. The GaN surfaces were covered by Si O 2 layers firstly, and then the Si O 2 layers were removed …
This work presents an analysis of the energy structure of carriers enclosed in self-assembled InAs quantum dots. Capacitance-voltage-spectroscopy (CV) with perpendicular magnetic …
Semiconductor quantum dots have been studied for nearly two decades with a variety of experimental and theoretical methods. The typical dimensions of these" artificial atoms" are …
W Yi, I Appelbaum, KJ Russell… - Journal of applied …, 2006 - pubs.aip.org
As a recent development of ballistic electron emission microscopy/spectroscopy (BEEM/BEES), 1, 2 ballistic electron emission luminescence (BEEL) utilizes a voltage …
GM Huang, YM Liu, CG Bao - Physical Review B, 2006 - APS
When the number of electrons changed from 3 to 12 in a planar dot, the corresponding electronic structures of the ground states have been studied. The dot is subjected to a strong …
Rozwój technologii w XX wieku doprowadził do powstania cywilizacji informacyjnej, w której podstawowym dobrem jest informacja i umiejętność jej przetwarzania. Stało się to możliwe …