Centrosymmetric PbTe∕ CdTe quantum dots coherently embedded by epitaxial precipitation

W Heiss, H Groiss, E Kaufmann, G Hesser… - Applied physics …, 2006 - pubs.aip.org
A concept for the fabrication of highly symmetric quantum dots that are coherently
embedded in a single crystalline matrix is demonstrated. In this approach, the formation of …

Fringing field directed assembly of nanomaterials

CR Barry, HO Jacobs - Nano Letters, 2006 - ACS Publications
This letter reports on a new gas-phase printing approach to deposit nanomaterials into
addressable areas on a surface with 50 nm lateral accuracy. Localized fringing fields that …

Atomistic simulations of long-range strain and spatial asymmetry molecular states of seven quantum dots

M Korkusinski, G Klimeck - Journal of Physics: Conference …, 2006 - iopscience.iop.org
Coherent coupling and formation of molecular orbitals in vertically coupled quantum-dot
molecules is studied for a seven-dot InAs/GaAs system. The electron states are computed …

Properties of photoluminescence in type-II ZnTe∕ ZnSe quantum dots

TY Lin, DY Lyu, J Chang, JL Shen, WC Chou - Applied physics letters, 2006 - pubs.aip.org
Temperature and time evolution of the photoluminescence (PL) intensity of bimodal
ZnTe/ZnSe type-II quantum dots (QDs) were investigated. A particular temperature …

High-density InGaN nanodots grown on pretreated GaN surfaces

P Chen, SJ Chua, JN Tan - Applied physics letters, 2006 - pubs.aip.org
High-density InGaN nanodots are successfully grown on pretreated GaN surfaces. The GaN
surfaces were covered by Si O 2 layers firstly, and then the Si O 2 layers were removed …

Ladungsträgerquantisierung in selbstorganisierten Nanostrukturen

O Wibbelhoff - 2006 - bibliographie.ub.uni-due.de
This work presents an analysis of the energy structure of carriers enclosed in self-assembled
InAs quantum dots. Capacitance-voltage-spectroscopy (CV) with perpendicular magnetic …

Few-Electron quantum dot molecules

M Helle - 2006 - aaltodoc.aalto.fi
Semiconductor quantum dots have been studied for nearly two decades with a variety of
experimental and theoretical methods. The typical dimensions of these" artificial atoms" are …

Vertically integrated optics for ballistic electron emission luminescence: Device and microscopy characterizations

W Yi, I Appelbaum, KJ Russell… - Journal of applied …, 2006 - pubs.aip.org
As a recent development of ballistic electron emission microscopy/spectroscopy
(BEEM/BEES), 1, 2 ballistic electron emission luminescence (BEEL) utilizes a voltage …

Variation of core-ring structures of quantum dots and the magic angular momenta in the region of intermediate particle number

GM Huang, YM Liu, CG Bao - Physical Review B, 2006 - APS
When the number of electrons changed from 3 to 12 in a planar dot, the corresponding
electronic structures of the ground states have been studied. The dot is subjected to a strong …

[PDF][PDF] Spektroskopia optyczna niskowymiarowych struktur półprzewodnikowych z uwzględnieniem technik pomiarowych o wysokiej rozdzielczości przestrzennej.

W Rudno-Rudziński - 2006 - dbc.wroc.pl
Rozwój technologii w XX wieku doprowadził do powstania cywilizacji informacyjnej, w której
podstawowym dobrem jest informacja i umiejętność jej przetwarzania. Stało się to możliwe …