Kelvin probe force and surface photovoltage microscopy observation of minority holes leaked from active region of working InGaAs∕ AlGaAs∕ GaAs laser diode
AV Ankudinov, VP Evtikhiev, KS Ladutenko… - Journal of applied …, 2007 - pubs.aip.org
A method for direct observation of carrier leakage from active regions of working
semiconductor light-emitting diodes and lasers is suggested. In this method, Kelvin probe …
semiconductor light-emitting diodes and lasers is suggested. In this method, Kelvin probe …
Compositional contrast in AlxGa1− xN/GaN heterostructures using scanning spreading resistance microscopy
Scanning spreading resistance microscopy has found extensive use as a dopant-profiling
technique for silicon-based devices, and to a lesser extent for some III–V materials. Here we …
technique for silicon-based devices, and to a lesser extent for some III–V materials. Here we …
Scanning Voltage Microscopy: Investigating the Inner Workings of Optoelectronic Devices
SB Kuntze, D Ban, EH Sargent… - … Phenomena at the …, 2007 - Springer
Scanning voltage microscopy and scanning differential resistance microscopy analyses on
diode lasers are presented: the direct observation of the current blocking breakdown in a …
diode lasers are presented: the direct observation of the current blocking breakdown in a …