SiGe BiCMOS technology: An IC design platform for extreme environment electronics applications

JD Cressler - 2007 IEEE International Reliability Physics …, 2007 - ieeexplore.ieee.org
The drivers in the extreme environment electronics community are beginning to perk up their
ears to the possibilities of using SiGe technology, especially for space electronics …

Visible light emission by a reverse-biased integrated silicon diode

M Morschbach, M Oehme… - IEEE transactions on …, 2007 - ieeexplore.ieee.org
In this paper, the paper discussed the emission of visible light by a monolithically integrated
silicon diode under reverse bias. The emission of light is achieved using a special defect …

On the use of cryogenic measurements to investigate the potential of Si/SiGe: C HBTs for terahertz operation

P Chevalier, N Zerounian, B Barbalat… - 2007 IEEE Bipolar …, 2007 - ieeexplore.ieee.org
potential of Si/SiGe:C HBTs for terahertz operation Page 1 IEEE BCTM 2.3 On the use of
cryogenic measurements to investigate the potential of Si/SiGe:C HBTs for terahertz operation P …

Impact of scaling on the inverse-mode operation of SiGe HBTs

A Appaswamy, M Bellini, WML Kuo… - IEEE transactions on …, 2007 - ieeexplore.ieee.org
The inverse-mode operational regime of silicon germanium (SiGe) heterojunction bipolar
transistors (HBTs) has to date been largely ignored and is typically dismissed as a viable …

Rf cmos or sige bicmos in rf and mixed signal circuit design

AH Pawlikiewicz, SE El Rai - 2007 14th International …, 2007 - ieeexplore.ieee.org
The dilemma facing the semiconductor company supplying the wireless markets is not trivial.
Deciding what technology to choose for commercial applications where the price, time to …

[PDF][PDF] Analysis and Design of Low-Noise Amplifiers in Silicon-Germanium Hetrojunction Bipolar Technology for Radar and Communication Systems

T Thrivikraman - 2007 - Citeseer
A key building block in any wireless radar or communication system is the radiofrequency
(RF) front-end. These challenging circuits prove to be a limiting factor in restricting …

SiGe double barrier resonant tunneling diodes on bulk SiGe substrates with high peak-to-valley current ratio

S Tsujino, N Usami, A Weber, G Mussler… - Applied Physics …, 2007 - pubs.aip.org
The authors present high-quality p-type SiGe double barrier resonant tunneling diodes
obtained from bulk SiGe substrates grown by the multicomponent zone-melting method and …

An exploration of substrate coupling at K-band between a SiGe HBT power amplifier and a SiGe HBT voltage-controlled-oscillator

JP Comeau, L Najafizadeh, JM Andrews… - IEEE microwave and …, 2007 - ieeexplore.ieee.org
This work presents a case study of circuit-to-circuit substrate coupling between a 24-GHz
power amplifier (PA) and a 23-GHz voltage-controlled oscillator (VCO) implemented in a …

Source dependence and technology scaling effects on the radiation tolerance of SiGe HBTs at extreme dose and fluence levels

AK Sutton, APG Prakash, JD Cressler… - 2007 9th European …, 2007 - ieeexplore.ieee.org
We investigate the response of SiGe HBTs exposed to high fluence and total dose levels of
proton, neutron and gamma irradiation typically encountered in high energy physics …

Microscopic modeling of high frequency noise in SiGe HBTs

M Ramonas, P Sakalas, C Jungemann… - … 2007-37th European …, 2007 - ieeexplore.ieee.org
The SIMS doping profile of SiGe heterojunction bipolar transistor is calibrated for best
agreement of the hydrodynamic model results with the experiment. DC and small-signal …