Raman scattering study of carrier-transport and phonon properties of crystals with graded doping
S Nakashima, T Kitamura, T Mitani, H Okumura… - Physical Review B …, 2007 - APS
Micro-Raman imaging measurements of n-type 4 H-Si C crystals with graded donor
concentration were carried out, and spatial distributions of the free carrier concentration …
concentration were carried out, and spatial distributions of the free carrier concentration …
Raman scattering characterization and electron phonon coupling strength for MeV implanted InP (111)
D Paramanik, S Varma - Journal of applied physics, 2007 - pubs.aip.org
Structural modifications in InP (111) due to 1.5 MeV implantation of Sb have been
characterized using first-order and second-order Raman spectroscopy. With both …
characterized using first-order and second-order Raman spectroscopy. With both …
Optical phonon behavior in strain-free dilute Ga (As, N) studied by Raman scattering
We present a Raman-scattering study on strain-free dilute Ga (As, N) epilayers grown by
molecular beam epitaxy. The aim of our work is to discriminate the effect of alloying from the …
molecular beam epitaxy. The aim of our work is to discriminate the effect of alloying from the …
Femtosecond versus nanosecond laser micro-machining of InP: a nondestructive three-dimensional analysis of strain
L Xu, D Lowney, PJ McNally, A Borowiec… - Semiconductor …, 2007 - iopscience.iop.org
Ultra-fast femtosecond laser micro-machining can lead to improved surface morphology and
a reduction in the heat-affected zone. In this paper, synchrotron x-ray topography (SXRT) …
a reduction in the heat-affected zone. In this paper, synchrotron x-ray topography (SXRT) …
Structural modifications in InP nanostructures prepared by Ar+-ion irradiation
SK Mohanta, RK Soni, NN Gosvami… - Journal of Applied …, 2007 - pubs.aip.org
The evolution of nanopatterned InP surfaces by low-energy Ar+-ion irradiation and their
dependence on incidence angle were investigated by field emission scanning electron …
dependence on incidence angle were investigated by field emission scanning electron …
[HTML][HTML] Extracting electron densities in n-type GaAs from Raman spectra: theory
HS Bennett - Journal of research of the National Institute of …, 2007 - ncbi.nlm.nih.gov
In this paper, we present the theory for calculating Raman line shapes as functions of the
Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities …
Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities …
Nanostructuring of InP surface by low-energy ion beam irradiation
SK Mohanta, RK Soni, S Tripathy… - … of Nanoscience and …, 2007 - ingentaconnect.com
The InP nanodots of size 55 to 100 nm and height 25 to 30 nm have been synthesized by
low-energy Ar+-ion irradiation with different ion energies. Sizes and size distributions of the …
low-energy Ar+-ion irradiation with different ion energies. Sizes and size distributions of the …
Raman scattering studies of InP nanostructures created by MeV Sb ion implantation
D Paramanik, S Varma - Journal of Nanoscience and …, 2007 - ingentaconnect.com
We have investigated the nanostructures created via MeV implantations by utilizing the
techniques of Raman scattering and scanning probe microscope (SPM). SPM demonstrates …
techniques of Raman scattering and scanning probe microscope (SPM). SPM demonstrates …
Optical phonon behavior in strain-free dilute Ga (As, N) studied by Raman scattering
We present a Raman-scattering study on strain-free dilute Ga (As, N) epilayers grown by
molecular beam epitaxy. The aim of our work is to discriminate the effect of alloying from the …
molecular beam epitaxy. The aim of our work is to discriminate the effect of alloying from the …