Systematic investigation into the influence of growth conditions on InAs/GaAs quantum dot properties
T Passow, S Li, P Feinäugle, T Vallaitis… - Journal of Applied …, 2007 - pubs.aip.org
The influence of the conditions during growth of InAs/GaAs quantum-dot structures on GaAs
(001) by molecular-beam epitaxy was investigated systematically with respect to achieving …
(001) by molecular-beam epitaxy was investigated systematically with respect to achieving …
Complete suppression of large InAs island formation on GaAs by metal organic chemical vapor deposition with periodic AsH3 interruption
Self-assembled InAs quantum dots (QDs) on GaAs substrates were grown by metal organic
chemical vapor deposition with periodic As H 3 interruption. In contrast to the conventional …
chemical vapor deposition with periodic As H 3 interruption. In contrast to the conventional …