Undulation of sub-100nm porous dielectric structures: A mechanical analysis

M Darnon, T Chevolleau, O Joubert… - Applied Physics …, 2007 - pubs.aip.org
In microelectronics technologies, patterning of sub-100 nm width ridges capped with a
titanium nitride mask can lead to undulations of the ridges detrimental to performances. This …