Quantum-dot optoelectronic devices
P Bhattacharya, Z Mi - Proceedings of the IEEE, 2007 - ieeexplore.ieee.org
Self-organized In (Ga) As/Ga (Al) As quantum dots have emerged as useful nanostructures
that can be epitaxially grown and incorporated in the active region of devices. The near …
that can be epitaxially grown and incorporated in the active region of devices. The near …
光致发光谱研究自组织InAs 双模量子点态填充
贾国治， 姚江宏， 张春玲， 舒强， 刘如彬， 叶小玲… - 光谱学与光谱 …, 2007 - cqvip.com
采用固态源分子束外延技术在GaAs (100) 衬底上, 制备了InAs 量子点, 对样品进行原子力显微镜
测试, 统计结果表明量子点尺寸呈双模分布. 光致发光谱研究表明, 在室温和77K 下 …
测试, 统计结果表明量子点尺寸呈双模分布. 光致发光谱研究表明, 在室温和77K 下 …
[PDF][PDF] CURRENT ISSUES IN CRYSTAL GROWTH FROM THE VAPOUR
S CARR, C PAORICI - researchgate.net
In this paper the fundamentals of the three-dimensional growth mechanism that takes place
during the Molecular Beam Epitaxy of highly lattice-mismatched semiconductor …
during the Molecular Beam Epitaxy of highly lattice-mismatched semiconductor …