Advances in AFM for the electrical characterization of semiconductors
RA Oliver - Reports on Progress in Physics, 2008 - iopscience.iop.org
Atomic force microscopy (AFM) is a key tool for nanotechnology research and finds its
principal application in the determination of surface topography. However, the use of the …
principal application in the determination of surface topography. However, the use of the …
Investigation of contact-force dependent effects in conductive atomic force microscopy on Si and GaAs
W Brezna, J Smoliner - Journal of Applied Physics, 2008 - pubs.aip.org
In this work, we systematically investigated the force dependence of conductive atomic force
microscopy on n-type Si and n-type GaAs. IV curves were recorded under different tip …
microscopy on n-type Si and n-type GaAs. IV curves were recorded under different tip …
Carrier transport in advanced semiconductor materials
F Giannazzo, P Fiorenza, V Raineri - Applied Scanning Probe Methods X …, 2008 - Springer
In this chapter, the main scanning probe microscopy based methods to measure transport
properties in advanced semiconductor materials are presented. The two major approaches …
properties in advanced semiconductor materials are presented. The two major approaches …
Wet Etching Study of La0.67(Sr0.5Ca0.5)0.33MnO3 Films on Silicon Substrates
JH Kim, AM Grishin, VA Ignatova - Journal of electronic materials, 2008 - Springer
Wet etching of colossal magnetoresistive (CMR) perovskite La 0.67 (Sr 0.5 Ca 0.5) 0.33
MnO 3 (LSCMO) films on Bi 4 Ti 3 O 12/CeO 2/yttrium-stabilized zirconia (YSZ)-buffered Si …
MnO 3 (LSCMO) films on Bi 4 Ti 3 O 12/CeO 2/yttrium-stabilized zirconia (YSZ)-buffered Si …
Applications of atomic force microscope (AFM) in the field of nanomaterials and nanocomposites
S Bandyopadhyay, SK Samudrala… - Functional …, 2008 - Springer
Nanotechnology implies the capability to build up tailored nanostructures and devices for
given functions by control at the atomic and molecular levels. Development of novel …
given functions by control at the atomic and molecular levels. Development of novel …
Accurate carrier profiling of n-type GaAs junctions
T Clarysse, G Brammertz, D Vanhaeren… - Materials science in …, 2008 - Elsevier
As CMOS is approaching the 22nm node, the importance of high-mobility materials such as
Ge and GaAs is rapidly increasing. For the timely development of these new technologies …
Ge and GaAs is rapidly increasing. For the timely development of these new technologies …