An X- and Ku-Band 8-Element Phased-Array Receiver in 0.18- SiGe BiCMOS Technology
KJ Koh, GM Rebeiz - IEEE Journal of Solid-State Circuits, 2008 - ieeexplore.ieee.org
This paper demonstrates an 8-element phased array receiver in a standard 0.18-mum SiGe
BiCMOS (1P6M, SiGe HBT ft ap 150 GHz) technology for X-and Ku-band applications. The …
BiCMOS (1P6M, SiGe HBT ft ap 150 GHz) technology for X-and Ku-band applications. The …
Pull-in instabilities in functionally graded microthermoelectromechanical systems
DJ Hasanyan, RC Batra… - Journal of Thermal …, 2008 - Taylor & Francis
We study pull-in instabilities in a functionally graded microelectromechanical system
(MEMS) due to the heat produced by the electric current. Material properties of two-phase …
(MEMS) due to the heat produced by the electric current. Material properties of two-phase …
Reduced pressure–chemical vapour deposition of Si/SiGe heterostructures for nanoelectronics
JM Hartmann, F Andrieu, D Lafond, T Ernst… - Materials Science and …, 2008 - Elsevier
We have first of all quantified the impact of pressure on Si and SiGe growth kinetics. Definite
growth rate and Ge concentration increases with the pressure have been evidenced at low …
growth rate and Ge concentration increases with the pressure have been evidenced at low …
Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon (111)/insulator/Si (111) heterostructures
T Schroeder, P Zaumseil, O Seifarth… - New Journal of …, 2008 - iopscience.iop.org
The integration of alternative semiconductor layers on the Si material platform via oxide
heterostructures is of interest to increase the performance and/or functionality of future Si …
heterostructures is of interest to increase the performance and/or functionality of future Si …
Current topics of silicon germanium devices
E Kasper - Applied surface science, 2008 - Elsevier
Silicon germanium (SiGe) is lattice mismatched to silicon by up to 4% depending on its Ge
content. Basic investigations on strained layer growth, interface properties and deviation …
content. Basic investigations on strained layer growth, interface properties and deviation …
[图书][B] Integrated microwave and millimeter-wave phased-array designs in silicon technologies
KJ Koh - 2008 - search.proquest.com
This research focuses on the design and analysis of on-chip phased-array receivers and
transmitters in silicon technologies. Passive phase shifters have been widely used in …
transmitters in silicon technologies. Passive phase shifters have been widely used in …
Emerging application opportunities for SiGe technology
JD Cressler - 2008 IEEE Custom Integrated Circuits …, 2008 - ieeexplore.ieee.org
Bandgap-engineered SiGe HBTs are fully-Si-manufacturing compatible, and can be
fabricated in a BiCMOS platform on 200 mm wafers at high yield. SiGe HBTs are capable of …
fabricated in a BiCMOS platform on 200 mm wafers at high yield. SiGe HBTs are capable of …
[图书][B] Bulk silicon-germanium heterojunction bipolar transistor process feature implications for single-event effects analysis and charge collection mechanisms
JA Pellish - 2008 - search.proquest.com
Since 1995, when IBM's commercial silicon-germanium (SiGe) BiCMOS process emerged at
the Bipolar/BiCMOS Circuits and Technology Meeting [NHM+95, AFS+97], SiGe-based …
the Bipolar/BiCMOS Circuits and Technology Meeting [NHM+95, AFS+97], SiGe-based …
[PDF][PDF] Modeling of Minority Carrier Recombination and Resistivity in SiGe BiCMOS Technology for Extreme Environment Applications
KA Moen - 2008 - academia.edu
The primary incentives for developing a more accurate understanding of charge carrier
dynamics are presented in this chapter. The fundamentals of the SiGe HBT and SiGe …
dynamics are presented in this chapter. The fundamentals of the SiGe HBT and SiGe …
[HTML][HTML] Bifurcation and deviation of cleavage paths at through-thickness grain boundaries
The behavior of cleavage crack fronts at grain boundaries in free-standing silicon thin films
is investigated through a microtensile experiment. In addition to the crystallographic …
is investigated through a microtensile experiment. In addition to the crystallographic …