The free carrier concentration of n-4 H-Si C was deduced by Raman spectroscopy using LO
phonon plasmon coupled (LOPC) modes as a monitor band. We could determine the free …

Phonon-plasmon coupled mode Raman spectra of p-type GaSb were measured at room
temperature as a function of hole concentration. These spectra were obtained using an …

We investigate inelastic light scattering by longitudinal optic phonon-plasmon coupled
modes (LOPCMs) in a series of heavily Se-doped, n-type GaAs 1− x N x epilayers with x< …

Phonon-plasmon coupled mode Raman spectra of n-type GaSb were measured at room
temperature as a function of electron concentration. These spectra were obtained using an …

The doping-induced metal-insulator transition (MIT) and superconductivity has been studied
in highly boron-doped single crystal diamond (structural properties, scaling law approach for …

With the fast growing interest in nanotechnology, fabrication of regular arrays of
semiconductor nanostructures with controlled size and height is of great importance. These …

High energy light ion irradiation has been used to anneal H-related defect complexes and to
modify the electronic properties of semi-insulating InP (SI-InP). Raman and infrared …

We investigate inelastic light scattering by longitudinal optic phonon-plasmon coupled
modes LOPCMs in a series of heavily Se-doped, n-type GaAs1− xNx epilayers with x 0.4 …