Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− xBix
We investigate the electronic properties of Ga As 1− x Bi x by photoluminescence at variable
temperature (T= 10–430 K) and high magnetic field (B= 0–30 T). In Ga As 0.981 Bi 0.019 …
temperature (T= 10–430 K) and high magnetic field (B= 0–30 T). In Ga As 0.981 Bi 0.019 …
Structural investigation of GaAs1− xBix/GaAs multiquantum wells
Y Tominaga, Y Kinoshita, K Oe, M Yoshimoto - Applied Physics Letters, 2008 - pubs.aip.org
GaAs 1− x Bi x/GaAs multiquantum wells (MQWs) have been grown in the layer-by-layer
mode of molecular beam epitaxy. A well-defined multilayered structure of the MQWs has …
mode of molecular beam epitaxy. A well-defined multilayered structure of the MQWs has …