Electron localization in graphene quantum dots

P Hewageegana, V Apalkov - Physical Review B, 2008 - APS
We study theoretically a localized state of an electron in a graphene quantum dot with a
sharp boundary. Due to Klein's tunneling, the “relativistic” electron in graphene cannot be …

Uniform InGaAs quantum dot arrays fabricated using nanosphere lithography

X Qian, J Li, D Wasserman, WD Goodhue - Applied Physics Letters, 2008 - pubs.aip.org
We demonstrate the fabrication of optically active uniform InGaAs quantum dot arrays by
combining nanosphere lithography and bromine ion-beam-assisted etching on a single …

Dark current and band profiles in low defect density thick multilayered GaAs/InAs self-assembled quantum dot structures for infrared detectors

T Asano, A Madhukar, K Mahalingam… - Journal of Applied …, 2008 - pubs.aip.org
We report results of a systematic study of the structural and photoresponse properties of
GaAs/{InAs quantum dot (QD)/InGaAs quantum well/GaAs}× m multiple quantum dot (MQD) …

Quantum dots-in-a-well focal plane arrays

TE Vandervelde, MC Lenz, E Varley… - IEEE Journal of …, 2008 - ieeexplore.ieee.org
In this paper, the basics and some of the recent developments in quantum dots-in-a-well
(DWELL) focal plane arrays (FPAs) are reviewed. Fundamentally, these detectors represent …

Semiconductor quantum dots for biological applications

BS Santos, PMA Farias, A Fontes - … for Novel Devices in Photonics and …, 2008 - Elsevier
Publisher Summary This chapter examines nanoparticles quantum dots (QDs). QDs are
semiconductor three-dimensional nanoparticles, with typical dimensions ranging from …

Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy

V Kunets, TA Morgan, YI Mazur, VG Dorogan… - Journal of Applied …, 2008 - pubs.aip.org
Remotely doped In 0.35 Ga 0.65 As layers of different coverages 6, 9, 11, and 13 ML were
grown by molecular beam epitaxy on (100) GaAs. Quantum dot (QD) nucleation was …

π-SIFT: A photometric and scale invariant feature transform

JH Park, KW Park, SH Baeg… - 2008 19th International …, 2008 - ieeexplore.ieee.org
For many years, various local descriptors that are insensitive to geometric changes such as
viewpoint, rotation, and scale changes, have been attracting attention due to their promising …

[PDF][PDF] 插入生长AlGaAs 薄膜对InAs 量子点探测器性能的影响

王茺, 刘昭麟, 李天信, 陈平平, 崔昊杨, 肖军, 张曙… - 物理学报, 2008 - wulixb.iphy.ac.cn
利用分子束外延生长获得的两个InAs 量子点样品制备了n 型的量子点红外探测器.
对于其中一个器件, 在InAs 量子点有源区的底部和顶部分别插入生长了AlGaAs 势垒层 …

Multicolor quantum dots-in-a-well focal plane arrays

TE Vandervelde, MC Lenz, E Varley… - Infrared Technology …, 2008 - spiedigitallibrary.org
This paper discusses recent and future advancements in the field of quantum dots-in-a-well
(DWELL) focal plane arrays (FPAs). Additionally, for clarity sake, the fundamentals of FPA …

Theory of electronic and optical properties of nanostructures

P Hewageegana - 2008 - scholarworks.gsu.edu
Abstract" There is plenty of room at the bottom." This bold and prophetic statement from
Nobel laureate Richard Feynman back in 1950s at Cal Tech launched the Nano Age and …