Calibrated scanning spreading resistance microscopy profiling of carriers in III–V structures

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Charge transport and trapping in InN nanowires investigated by scanning probe microscopy

J Liu, Z Cai, G Koley - Journal of Applied Physics, 2009 - pubs.aip.org
Charge transport and trapping in InN nanowires (NWs) and their networks have been
investigated using scanning current voltage microscopy (SIVM) and scanning gate …
被引用次数：16 相关文章 所有 7 个版本