Three-dimensional chip (3-D) stacking technology provides a new approach to address the
so-called memory wall problem. Memory processor chip stacking reduces this memory wall …

Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ion-induced current
transients are measured using Sandia National Laboratories' microbeam and high-and low …

Proton irradiation results are shown here for three different SiGe: C HBT technologies from
IHP Microelectronics. High damages are observed although the transistors remain usable …

In this study we present the results of radiation hardness studies performed on three different
SiGe: C BiCMOS technologies from Innovation for High Performance Microelectronics (IHP) …

Engineered Si wafer systems present an important materials science approach to further
improve the performance of Si‐based micro‐and nanoelectronics. This is due to the …

A bandgap voltage reference circuit is provided that includes a PTAT source whose polarity
reverses at a determinable temperature. The PTAT source is combined with a CTAT source …

A bandgap reference circuit which is operable in low supply conditions is described. Such a
circuit includes a second amplifier and a resistor at the output of a bandgap reference cell to …

IuAl absolute voltage by Scaling the reference Voltage at a first temperature to the desired
value by a temperature indepen dent Voltage. Then, at a second temperature, the output …

In this paper, we investigate the physics and modeling of temperature dependence of
various parasitic resistances in SiGe heterojunction bipolar transistors down to 30 K. Carrier …

This paper compares CMOS FET and SiGe HBT technologies for automotive applications
and discusses limitations and opportunities for further development of both. SiGe circuits …