We have studied the longitudinal-optical (LO)-phonon–plasmon coupled modes in high-
mobility InN layers with free-electron densities ranging from 2.3× 10 18 to 1.6× 10 19 cm− 3 …

Phonon-plasmon coupled mode Raman spectra of n-type GaInAsSb were measured at
room temperature as a function of electron concentration. A relatively simple spectral model …

We perform visible and ultraviolet (UV) Raman-scattering experiments to study a series of
undoped and Mn-doped c-GaN thin films grown by plasma-assisted molecular beam epitaxy …

During this PhD project, the metal-insulator transition and superconductivity of highly boron-
doped single crystal diamond and related materials have been investigated. The critical …

We use Raman scattering to study the LO–plasmon coupled modes (LOPCMs) of n-type
GaAs 1− x N x epilayers grown by molecular beam epitaxy (0.1%≤ x≤ 0.36%). We find that …

Zusammenfassung Im Laufe dieser Doktorarbeit wurde der Metall-Isolator-Ubergang und
die Supraleitung in einkristallinem hoch Bor-dotierten Diamant und verwandten Materialien …