A new approach to obtain visible luminescence from sol–gel‐derived SiOC films is
proposed. In order to investigate the influence of Si and C content, Si‐and C‐rich SiOC films …

In this paper we report the visible–near-infrared light emission properties of nanocrystalline
silicon (nc-Si) light emitting devices (LEDs) based on nc-Si/SiO2 multilayer structures …

It is well known that silicon-rich oxide (SRO) shows intense photoluminescence (PL). In this
work, the authors studied the relationship of the surface morphology and the PL emission …

Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin
film multiply implanted with Si ions and annealed at 1100 C⁠. The EL intensity shows a …

An atmospheric pressure microplasma jet was employed as a deposition tool to fabricate
silicon oxycarbide films from tetraethoxysilane-argon (Ar) mixture gas at room temperature …

Blends consisting of doped silicon nanocrystals (Si-ncs) and two conjugated polymers (poly
(3-hexylthiophene)(P3HT) and poly (methoxy ethylexyloxy phenylenevinilene)(MEH PPV)) …

Silicon-rich oxide/silicon dioxide,, superlattice thin films, deposited by the radio-frequency
magnetron-sputtering technique, was rapid thermal annealed at temperatures ranging from …

Influence of thermal annealing on electroluminescence (EL) from multiple-Si-implanted
silicon nitride films has been investigated. A reduced injection current and an enhanced EL …

Silicon ions were implanted into SiO2 thin films with various doses and energies. For the
films implanted with various ion doses the photoluminescence (PL) intensity of 470nm firstly …

Amorphous-Si: H/SiO2 multilayers were fabricated on various substrates by alternatively
changing the ultra-thin amorphous Si films deposition and in situ plasma oxidation …